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Composite Transistors
XP04878
Silicon N-channel MOSFET
(0.425)
Unit: mm
0.12+0.05 -0.02
For switching Features
* Allowing 2.5 V drive * Incorporating a built-in gate protection-diode * S-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half
10
0.20.05 6 5 4
1.250.10 2.10.1
1
2
3
(0.65) (0.65) 1.30.1 2.00.1
0.90.1
* 2SK3539 x 2
Absolute Maximum Ratings Ta = 25C
Parameter Drain-source surrender voltage Gate-source voltage (Drain open) Drain current Peak drain current Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PT Tch Tstg Rating 50 7 100 200 150 150 -55 to +150 Unit V V mA mA mW C C
1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) EIAJ: SC-88
0 to 0.1
0.9+0.2 -0.1
Basic Part Number
4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) SMini6-G1 Package
Marking Symbol: 7Y Internal Connection
6 5 4
Electrical Characteristics Ta = 25C 3C
Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff VDD = 3 V, VGS = 0 V to 3 V, RL = 470 VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Conditions ID = 10 A, VGS = 0 VDS = 50 V, VGS = 0 VGS = 7 V, VDS = 0 ID = 1 A, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on time Turn-off time ID = 10 mA, VGS = 4.0 V VDS = 3 V, VGS = 0 V, f = 1 MHz 20 0.9 50
1 Min
2 Typ
3 Max Unit V 1.0 5 A A V mS pF pF pF ns ns
1.2 8 6 60 12 7 3 200 200
1.5 15 12
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
0.20.1
5
Publication date: December 2003
SJJ00263BED
1
XP04878
PT Ta
160
ID VDS
70 60 Ta = 25C VGS = 2.0 V 1.9 V 250 VDS = 3 V
ID VGS
Ta = -25C 25C 75C 150
Total power dissipation PT (mW)
200
Drain current ID (mA)
50 40 30 20 10
1.8 V
80
Drain current ID (mA)
120
1.7 V 1.6 V 1.5 V
100
40
50
0 0 40 80 120 160
0
0
2
4
6
8
10
12
0
0
1.0
2.0
3.0
Ambient temperature Ta (C)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Yfs VGS
60
RDS(on) VGS
10
ID = 10 mA
VIN IO
VO = 5 V Ta = 25C
Forward transfer admittance |Yfs | (mS)
Drain-source ON resistance RDS(on) ()
0.16
VDS = 3 V f = 1 MHz Ta = 25C
50
0.12
40
Input voltage VIN (V)
Ta = 75C 25C -25C
30
1
0.08
20
0.04
10
0
0
1.0
2.0
3.0
0
10 -1
0
2
4
6
1
10
102
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
Output current IO (mA)
2
SJJ00263BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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